Growth of Homogeneous SiGe Crystals in Microgravity by the TLZ Method (Hicari) Experiment: Flight Engineer (FE)-6 Wakata removed the Sample Cartridge Serial Number 004 from Sample Cartridge Automatic Exchange Mechanism (SCAM) holder #4. The materials science investigation Growth of Homogeneous Silicon-Germanium (SiGe) Crystals in Microgravity by the TLZ Method (Hicari) aims to verify the crystal-growth …


