Tingyi Gu
University of Delaware
Next generation space communication and sensing would desire miniaturized photonic devices as fundamental building blocks, as those integrated photonic elements significantly reduce sizes, weight, and power compared to existing technologies. CMOS manufacturing offers wafer scale fabrication of a silicon based device with sub-10nm features and atomic-scale surface roughness. As the individual device performance is limited by the intrinsic properties of silicon, complex design involving cascaded multi-level circuits have been developed to improve the performance metrics. The objective of this project is to explore the hybrid integration techniques of incorporating new functional materials onto the large-scale silicon nanophotonic platform, to significantly improve the device efficiency, speed and radiation hardness. Also, hybrid chalcogenide-silicon photonic devices will be explored for both passive and active ionization radiation sensors. The research effort potentially benefits (1) the cost and SWaP efficiency of the future space optical communication system, replacing the multiple bulky and power hungry systems requiring individual testing and integration time; (2) in-situ instruments and sensors to fields and particles for space weather observations.