Crystal Growth of Alloy Semiconductor Under Microgravity (Alloy Semiconductor) - 11.22.16
The Crystal Growth of Alloy Semiconductor Under Microgravity (Alloy Semiconductor) investigation aims to develop a clear understanding of how semiconductor materials grow and crystallize in microgravity. The materials studied are also known to be useful as devices which convert heat into electricity (thermoelectrics). These studies may ultimately shed light on how higher quality crystals may be derived from other materials or incorporated into other devices such as solar cells. Science Results for Everyone
Information Pending Experiment Details
Yuko Inatomi, Japan Aerospace Exploration Agency (JAXA), Tsukuba, Japan
Kyoichi Kinoshita, Japan Aerospace Exploration Agency, Tsukuba, Japan
Yasutomo Arai, Japan Aerospace Exploration Agency (JAXA), Tsukuba, Japan
Yasunori Okano, Shizuoka University, Japan
Yasuhiro Hayakawa, Shizuoka University, Japan
Testsuo Ozawa, Shizuoka Institute of Science and Technology, Japan
Akira Tanaka, Shizuoka University, Japan
Koji Arafune, University of Hyogo, Japan
Arivanandhan Mukannan, Shizuoka University, Japan
Kaoruho Sakata, Japan Aerospace Exploration Agency, Tsukuba, Japan
Sponsoring Space Agency
Japan Aerospace Exploration Agency (JAXA)
Japan Aerospace Exploration Agency
ISS Expedition Duration
March 2013 - September 2013; March 2014 - March 2015
The purpose of the present research project is to make clear the factors for crystal growth of a high-quality bulk alloy semiconductor by investigating (1) solute transport in liquid and (2) surface orientation dependence of growth kinetics under microgravity and terrestrial conditions.
Operational Requirements and Protocols
Decadal Survey Recommendations
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Inatomi Y, Sakata K, Arivanandhan M, Rajesh G, Kumar VN, Koyama T, Momose Y, Ozawa T, Okano Y, Hayakawa Y. Growth of InxGa1−xSb alloy semiconductor at the International Space Station (ISS) and comparison with terrestrial experiments. npj Microgravity. 2015 August 27; 1: 15011. DOI: 10.1038/npjmgrav.2015.11.
Kumar VN, Arivanandhan M, Rajesh G, Koyama T, Momose Y, Sakata K, Ozawa T, Okano Y, Inatomi Y, Hayakawa Y. Investigation of directionally solidified InGaSb ternary alloys from Ga and Sb faces of GaSb(111) under prolonged microgravity at the International Space Station. npj Microgravity. 2016 July 21; 2: 16026. DOI: 10.1038/npjmgrav.2016.26.
Ground Based Results Publications
Sakata K, Mukai M, Rajesh G, Arivanandhan M, Inatomi Y, Ishikawa T, Hayakawa Y. Thermal properties of molten InSb, GaSb, and InxGa1-xSb alloy semiconductor materials in preparation for crystal growth experiments on the International Space Station. Advances in Space Research. 2013 December; epub. DOI: 10.1016/j.asr.2013.12.002.