Crystal Growth of Alloy Semiconductor Under Microgravity (Alloy Semiconductor) - 08.20.14
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The Crystal Growth of Alloy Semiconductor Under Microgravity (Alloy Semiconductor) investigation aims to develop a clear understanding of how semiconductor materials grow and crystallize in microgravity. The materials studied are also known to be useful as devices which convert heat into electricity (thermoelectrics). These studies may ultimately shed light on how higher quality crystals may be derived from other materials or incorporated into other devices such as solar cells.
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Sponsoring Space Agency
Japan Aerospace Exploration Agency (JAXA)
ISS Expedition Duration
March 2013 - September 2014
Previous ISS Missions
The purpose of the present research project is to make clear the factors for crystal growth of a high-quality bulk alloy semiconductor by investigating (1) solute transport in liquid and (2) surface orientation dependence of growth kinetics under microgravity and terrestrial conditions.
Ground Based Results Publications
Sakata K, Mukai M, Rajesh G, Mukannan A, Inatomi Y, Ishikawa T, Hayakawa Y. Thermal properties of molten InSb, GaSb, and InxGa1-xSb alloy semiconductor materials in preparation for crystal growth experiments on the International Space Station. Advances in Space Research. 2013 December; epub.