Crystal Growth of Alloy Semiconductor Under Microgravity (Alloy Semiconductor) - 11.04.14

Overview | Description | Applications | Operations | Results | Publications | Imagery
ISS Science for Everyone

Science Objectives for Everyone
The Crystal Growth of Alloy Semiconductor Under Microgravity (Alloy Semiconductor) investigation aims to develop a clear understanding of how semiconductor materials grow and crystallize in microgravity. The materials studied are also known to be useful as devices which convert heat into electricity (thermoelectrics). These studies may ultimately shed light on how higher quality crystals may be derived from other materials or incorporated into other devices such as solar cells.

Science Results for Everyone
Information Pending



The following content was provided by Yuko Inatomi, and is maintained in a database by the ISS Program Science Office.
Information provided courtesy of the Japan Aerospace and Exploration Agency (JAXA).

Experiment Details

OpNom

Principal Investigator(s)

  • Yuko Inatomi, Japan Aerospace Exploration Agency (JAXA), Tsukuba, Japan

  • Co-Investigator(s)/Collaborator(s)
  • Kyoichi Kinoshita, Japan Aerospace Exploration Agency, Tsukuba, Japan
  • Yasutomo Arai, Japan Aerospace Exploration Agency (JAXA), Tsukuba, Japan
  • Yasunori Okano, Shizuoka University, Japan
  • Yasuhiro Hayakawa, Shizuoka University, Japan
  • Testsuo Ozawa, Shizuoka Institute of Science and Technology, Japan
  • Akira Tanaka, Shizuoka University, Japan
  • Koji Arafune, University of Hyogo, Japan
  • Arivanandhan Mukannan, Shizuoka University, Japan
  • Kaoruho Sakata, Japan Aerospace Exploration Agency, Tsukuba, Japan

  • Developer(s)
    Information Pending
    Sponsoring Space Agency
    Japan Aerospace Exploration Agency (JAXA)

    Sponsoring Organization
    Information Pending

    Research Benefits
    Information Pending

    ISS Expedition Duration
    March 2013 - March 2015

    Expeditions Assigned
    35/36,39/40,41/42

    Previous ISS Missions
    Information Pending

    ^ back to top



    Experiment Description

    Research Overview
    The purpose of the present research project is to make clear the factors for crystal growth of a high-quality bulk alloy semiconductor by investigating (1) solute transport in liquid and (2) surface orientation dependence of growth kinetics under microgravity and terrestrial conditions.

    Description
    Information Pending

    ^ back to top



    Applications

    Space Applications
    Information Pending

    Earth Applications
    Information Pending

    ^ back to top



    Operations

    Operational Requirements
    Information Pending

    Operational Protocols
    Information Pending

    ^ back to top



    Results/More Information

    ^ back to top



    Results Publications

    ^ back to top


    Ground Based Results Publications

    ^ back to top


    ISS Patents

    ^ back to top


    Related Publications

      Sakata K, Mukai M, Rajesh G, Mukannan A, Inatomi Y, Ishikawa T, Hayakawa Y.  Thermal properties of molten InSb, GaSb, and InxGa1-xSb alloy semiconductor materials in preparation for crystal growth experiments on the International Space Station. Advances in Space Research. 2013 December; epub. DOI: 10.1016/j.asr.2013.12.002.

    ^ back to top


    Related Websites

    ^ back to top



    Imagery