Crystal Growth of Alloy Semiconductor Under Microgravity (Alloy Semiconductor) - 05.13.15

Overview | Description | Applications | Operations | Results | Publications | Imagery

ISS Science for Everyone

Science Objectives for Everyone
The Crystal Growth of Alloy Semiconductor Under Microgravity (Alloy Semiconductor) investigation aims to develop a clear understanding of how semiconductor materials grow and crystallize in microgravity. The materials studied are also known to be useful as devices which convert heat into electricity (thermoelectrics). These studies may ultimately shed light on how higher quality crystals may be derived from other materials or incorporated into other devices such as solar cells.
Science Results for Everyone
Information Pending

The following content was provided by Yuko Inatomi, and is maintained in a database by the ISS Program Science Office.
Information provided courtesy of the Japan Aerospace and Exploration Agency (JAXA).
Experiment Details

OpNom:

Principal Investigator(s)
Yuko Inatomi, Japan Aerospace Exploration Agency (JAXA), Tsukuba, Japan

Co-Investigator(s)/Collaborator(s)
Kyoichi Kinoshita, Japan Aerospace Exploration Agency, Tsukuba, Japan
Yasutomo Arai, Japan Aerospace Exploration Agency (JAXA), Tsukuba, Japan
Yasunori Okano, Shizuoka University, Japan
Yasuhiro Hayakawa, Shizuoka University, Japan
Testsuo Ozawa, Shizuoka Institute of Science and Technology, Japan
Akira Tanaka, Shizuoka University, Japan
Koji Arafune, University of Hyogo, Japan
Arivanandhan Mukannan, Shizuoka University, Japan
Kaoruho Sakata, Japan Aerospace Exploration Agency, Tsukuba, Japan

Developer(s)
Information Pending

Sponsoring Space Agency
Japan Aerospace Exploration Agency (JAXA)

Sponsoring Organization
Information Pending

Research Benefits
Information Pending

ISS Expedition Duration
March 2013 - March 2015

Expeditions Assigned
35/36,39/40,41/42

Previous ISS Missions
Information Pending

^ back to top

Experiment Description

Research Overview
The purpose of the present research project is to make clear the factors for crystal growth of a high-quality bulk alloy semiconductor by investigating (1) solute transport in liquid and (2) surface orientation dependence of growth kinetics under microgravity and terrestrial conditions.

Description
Information Pending

^ back to top

Applications

Space Applications
Information Pending

Earth Applications
Information Pending

^ back to top

Operations

Operational Requirements
Information Pending

Operational Protocols
Information Pending

^ back to top

Results/More Information

^ back to top

Results Publications

^ back to top

Ground Based Results Publications

^ back to top

ISS Patents

^ back to top

Related Publications

    Sakata K, Mukai M, Rajesh G, Mukannan A, Inatomi Y, Ishikawa T, Hayakawa Y.  Thermal properties of molten InSb, GaSb, and InxGa1-xSb alloy semiconductor materials in preparation for crystal growth experiments on the International Space Station. Advances in Space Research. 2013 December; epub. DOI: 10.1016/j.asr.2013.12.002.

^ back to top

Related Websites

^ back to top


Imagery