Crystal Growth of Alloy Semiconductor Under Microgravity (Alloy Semiconductor) - 01.09.14

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ISS Science for Everyone

Science Objectives for Everyone The Crystal Growth of Alloy Semiconductor Under Microgravity (Alloy Semiconductor) investigation aims to develop a clear understanding of how semiconductor materials grow and crystallize in microgravity. The materials studied are also known to be useful as devices which convert heat into electricity (thermoelectrics). These studies may ultimately shed light on how higher quality crystals may be derived from other materials or incorporated into other devices such as solar cells.

Science Results for Everyone Information Pending

This content was provided by Yuko Inatomi, and is maintained in a database by the ISS Program Science Office.
Information provided courtesy of the Japan Aerospace and Exploration Agency (JAXA).

Experiment Details


Principal Investigator(s)

  • Yuko Inatomi, Japan Aerospace Exploration Agency (JAXA), Tsukuba, Japan
  • Co-Investigator(s)/Collaborator(s)

  • Kyoichi Kinoshita, Tsukuba, Japan
  • Yasutomo Arai, Japan Aerospace Exploration Agency (JAXA), Tsukuba, Japan
  • Yasunori Okano, Shizuoka University, Japan
  • Yasuhiro Hayakawa, Shizuoka University, Japan
  • Testsuo Ozawa, Shizuoka Institute of Science and Technology, Japan
  • Akira Tanaka, Shizuoka University, Japan
  • Koji Arafune, University of Hyogo, Japan
  • Arivanandhan Mukannan, Shizuoka University, Japan
  • Kaoruho Sakata, Japan Aerospace Exploration Agency, Tsukuba, Japan
  • Developer(s)
    Information Pending

    Sponsoring Space Agency
    Japan Aerospace Exploration Agency (JAXA)

    Sponsoring Organization
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    Research Benefits
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    ISS Expedition Duration:
    March 2013 - September 2014

    Expeditions Assigned

    Previous ISS Missions
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    Experiment Description

    Research Overview
    The purpose of the present research project is to make clear the factors for crystal growth of a high-quality bulk alloy semiconductor by investigating (1) solute transport in liquid and (2) surface orientation dependence of growth kinetics under microgravity and terrestrial conditions.

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    Space Applications
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    Earth Applications
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    Operational Requirements
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    Operational Protocols
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    Results/More Information

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    Results Publications

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    Ground Based Results Publications

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    ISS Patents

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    Related Publications

      Sakata K, Mukai M, Rajesh G, Mukannan A, Inatomi Y, Ishikawa T, Hayakawa Y.  Thermal properties of molten InSb, GaSb, and InxGa1-xSb alloy semiconductor materials in preparation for crystal growth experiments on the International Space Station. Advances in Space Research. 2013 December; epub. DOI: 10.1016/j.asr.2013.12.002.

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    Related Websites

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