Growth of Homogeneous SiGe Crystals in Microgravity by the TLZ Method (Hicari) - 02.15.14

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Science Objectives for Everyone The materials science investigation Growth of Homogeneous SiGe Crystals in Microgravity by the TLZ Method (Hicari) aims to verify the crystal-growth by Travelling Liquidous Zone method, and to produce high-quality crystals of Silicon-Germanium (SiGe) semiconductor using the Japanese Experiment Module-Gradient Heating Furnace (JEM-GHF). Once this method is established, it is expected to be applied for developing much efficient solar cells and semiconductor-based electronics.

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This content was provided by Kyoichi Kinoshita, and is maintained in a database by the ISS Program Science Office.
Information provided courtesy of the Japan Aerospace and Exploration Agency (JAXA).

Experiment Details

OpNom

Principal Investigator(s)

  • Kyoichi Kinoshita, Japan Aerospace Exploration Agency, Tsukuba, Japan

  • Co-Investigator(s)/Collaborator(s)
  • Yasuyuki Ogata, Mitsubishi Materials, Japan
  • Hirokazu Kato, Mitsubishi Materials, Japan
  • Yasutomo Arai, Japan Aerospace Exploration Agency (JAXA), Tsukuba, Japan
  • Yuko Inatomi, Japan Aerospace Exploration Agency (JAXA), Tsukuba, Japan
  • Takao Tsukada, Tohoku University, Japan
  • Toru Maekawa, Toyo University, Japan
  • Satoshi Adachi, Japan Aerospace Exploration Agency, Tsukuba, Japan
  • Satoshi Matsumoto, Osaka City University, Osaka, Japan
  • Hirohiko Nakamura , Mitsubishi Research Institute, Japan
  • Jinko Ueda, Mitsubishi Materials, Japan

  • Developer(s)
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    Sponsoring Space Agency
    Japan Aerospace Exploration Agency (JAXA)

    Sponsoring Organization
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    Research Benefits
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    ISS Expedition Duration
    September 2012 - September 2014

    Expeditions Assigned
    33/34,35/36,37/38,39/40

    Previous ISS Missions
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    Experiment Description

    Research Overview
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    Description
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    Applications

    Space Applications
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    Operations

    Operational Requirements
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    Operational Protocols
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    Imagery