Growth of Homogeneous SiGe Crystals in Microgravity by the TLZ Method (Hicari) - 05.13.15

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The materials science investigation Growth of Homogeneous SiGe Crystals in Microgravity by the TLZ Method (Hicari) aims to verify the crystal-growth by Travelling Liquidous Zone method, and to produce high-quality crystals of Silicon-Germanium (SiGe) semiconductor using the Japanese Experiment Module-Gradient Heating Furnace (JEM-GHF). Once this method is established, it is expected to be applied for developing much efficient solar cells and semiconductor-based electronics.
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The following content was provided by Kyoichi Kinoshita, and is maintained in a database by the ISS Program Science Office.
Information provided courtesy of the Japan Aerospace and Exploration Agency (JAXA).
Experiment Details

OpNom:

Principal Investigator(s)
Kyoichi Kinoshita, Japan Aerospace Exploration Agency, Tsukuba, Japan

Co-Investigator(s)/Collaborator(s)
Yasuyuki Ogata, Mitsubishi Materials, Japan
Hirokazu Kato, Mitsubishi Materials, Japan
Yasutomo Arai, Japan Aerospace Exploration Agency (JAXA), Tsukuba, Japan
Yuko Inatomi, Japan Aerospace Exploration Agency (JAXA), Tsukuba, Japan
Takao Tsukada, Tohoku University, Japan
Toru Maekawa, Toyo University, Japan
Satoshi Adachi, Japan Aerospace Exploration Agency, Tsukuba, Japan
Hirohiko Nakamura , Mitsubishi Research Institute, Japan
Satoshi Matsumoto, Osaka City University, Osaka, Japan
Jinko Ueda, Mitsubishi Materials, Japan

Developer(s)
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Sponsoring Space Agency
Japan Aerospace Exploration Agency (JAXA)

Sponsoring Organization
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Research Benefits
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ISS Expedition Duration
September 2012 - September 2014

Expeditions Assigned
33/34,35/36,37/38,39/40

Previous ISS Missions
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Experiment Description

Research Overview
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Description
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Applications

Space Applications
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Earth Applications
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Operations

Operational Requirements
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Operational Protocols
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Results/More Information

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Results Publications

    Kinoshita K, Arai Y, Tsukada T, Inatomi Y, Miyata H, Tanaka R.  SiGe crystal growth aboard the international space station. Journal of Crystal Growth. 2014 October; epub. DOI: 10.1016/j.jcrysgro.2014.09.048.

    Kinoshita K, Arai Y, Inatomi Y, Tsukada T, Adachi S, Miyata H, Tanaka R, Yoshikawa J, Kihara T, Tomioka H, Shibayama H, Kubota Y, Warashina Y, Sasaki Y, Ishizuka Y, Harada Y, Wada S, Harada C, Ito T, Takayanagi M, Yoda S.  Growth of a Si0.50Ge0.50 crystal by the traveling liquidus-zone (TLZ) method in microgravity. Journal of Crystal Growth. 2014 February; 388: 12-16. DOI: 10.1016/j.jcrysgro.2013.11.020.

    Kinoshita K, Arai Y, Inatomi Y, Tsukada T, Miyata H, Tanaka R, Yoshikawa J, Kihara T, Tomioka H, Shibayama H, Kubota Y, Warashina Y, Ishizuka Y, Harada Y, Wada S, Ito T, Nagai N, Abe K, Sumioka S, Takayanagi M, Yoda S.  Compositional uniformity of a Si0.5Ge0.5 crystal grown on board the International Space Station. Journal of Crystal Growth. 2015 June; 419: 47-51. DOI: 10.1016/j.jcrysgro.2015.02.086.

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