X-Ray Diffraction Method

X-Ray Diffraction Method- For defect characterization of epitaxially grown cubic semiconductor layers. Based on new X-Ray Diffraction methods, this epitaxial growth and characterization technology makes mapping of defect density and defect location possible. This enables optimization of growth process parameters for defect-free fabrication of high-quality, semiconductor devices used in manufacturing products such as cell phones, thermoelectric devices, photovoltaic solar cells, and photon detectors.